| PART |
Description |
Maker |
| SST31LF043A-70-4C-WI SST31LF041-300-4E-WH SST31LF0 |
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位的SRAM ComboMemory
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位SRAM ComboMemory
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32
XTAL MTL SMT HC49/USM 4 Mbit闪存1兆位56千位的SRAM ComboMemory
XTAL CER SMT 7X5 2PAD
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
DIODE SWITCH 75V 350MW SOT-23
RECTIFIER SCHOTTKY SINGLE 5A 60V 175A-Ifsm 0.7Vf 0.5A-IR SMC 3K/REEL
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| SST39VF010-70-4I-B3K SST39VF010-70-4C-B3K SST39VF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
http://
Silicon Storage Technol...
|
| SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
| SST25WF512 SST25WF010 SST25WF020 |
512 Kbit / 1 Mbit / 2 Mbit 1.8V SPI Serial Flash
|
SST[Silicon Storage Technology, Inc]
|
| UL1242N UL1242 |
Ukad wzmacniacza p.cz.
UL1242N
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
List of Unclassifed Manufacturers
Ultra CEMI
ETC
|
| PSD8342V10JIT PSD834F2V-15 PSD9342V10MIT |
Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM
Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM 闪光私营部门3.3V电源，为8位微控制56千位双闪存和64千位的SRAM
Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM 闪光私营部门.3V电源，为8位微控制56千位双闪存和64千位的SRAM
|
意法半导
STMicroelectronics N.V.
|
| UL1401 |
Wzmacniacz mocy m.cz.
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| M24C16-125 M24C08-125 M24C02-125 M24C04-125 |
Automotive 16-Kbit, 8-Kbit, 4-Kbit and 2-Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
| M24C01-RBN6TP_S M24C16 M24C01-RDW3TP_S M24C08-RDW6 |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I虏C bus EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
|
STMicroelectronics
意法半导
|
| SST30VR041 SST30VR041-150-C-U1 SST30VR041-500-C-WH |
4 Mbit ROM 1 Mbit / 256 Kbit SRAM ROM/RAM Combo 4兆位光盘1兆位/ 256千位的SRAM ROM / RAM内存组合
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
SST[Silicon Storage Technology, Inc]
|
| CY14B116N-BZ25XIT CY14B116S-BZ25XI CY14B116S-BZ25X |
16-Mbit (2048 K 8/1024 K 16/512 K 32) nvSRAM
|
Cypress
|
